ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,693, issued on Oct. 27, was assigned to Sumitomo Electric Device Innovations Inc. (Yokohama, Japan). "Semiconductor device and method for m... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,694, issued on Oct. 27, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo). "Nitride semiconductor device and method for manufacturing nitri... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,695, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsin-chu, Taiwan). "Semiconductor device having na... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,696, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device with air g... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,697, issued on Oct. 27, was assigned to United Semiconductor (Xiamen) Co. Ltd. (Xiamen, China). "Semiconductor transistor device including ... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,698, issued on Oct. 27, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Via formation adjacent a middle-of-line cont... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,699, issued on Oct. 27, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Semiconductor device and method of manufacturing same" was invented ... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,700, issued on Oct. 27, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan). "High electron mobility transistor an... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,701, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor devices" was invented by Gy... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,702, issued on Oct. 27, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "Semiconductor device with gate electrode having opposite type dop... और पढ़ें